METHOD TO PREPARE PIXEL FOR UNCOOLED INFRARED FOCAL PLANE DETECTOR

摘要

An pixel for an uncooled infrared focal plane detector and a preparation method therefor, which relate to the technical field of uncooled infrared focal plane detectors. The pixel for an uncooled infrared focal plane detector comprises a structure of three layers, which are sequentially located on a semiconductor substrate (1) from bottom to top. The first layer of a bridge structure comprises a metal reflection layer (2), an insulation dielectric layer (4), a first supporting layer (6), a first support layer protection layer (7), a first metal electrode layer (9), and a first silicon nitride dielectric layer (10). The second layer of a thermal conversion structure comprises a second support layer (11), a second support layer protection layer (12), a thermal sensitive layer (17), a thermal sensitive layer production layer (18), a second metal electrode layer (14), and a second silicon nitride dielectric layer (15). The third layer of an absorption structure comprises a third support layer (19), an absorption layer (20), and an absorption layer protection layer (21). The pixel for an uncooled infrared focal plane detector can obviously improve the absorption rate of infrared radiation and can improve the response rate of a detector, thereby laying a foundation for manufacturing larger-array and smaller-pixel detectors.