LATERAL DOUBLE-DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD EFFECT TUBE

摘要

A lateral double-diffused metal oxide semiconductor field effect tube, comprising: a trench gate comprising a lower portion inside a trench and an upper portion outside the trench, the length of the lower portion in the width direction of a conductive channel being smaller than that of the upper portion, and the lower portion extending into a body region (4) and having a smaller depth than the body region (4); and an insulating structure (10) which is provided between a drain region (5) and the trench gate and extends downwards into a drift region (3), the depth of the insulating structure (10) being smaller than that of the drift region (3), the depth of the insulating structure (10) in the drift region (3) being greater than the depth of a field oxygen layer (7) in the drift region (3), the length of the insulating structure (10) in the width direction of the conductive channel being smaller than that of the drift region (3), field oxygen layers (7) being formed on the surfaces on two sides of the insulating structure (10), and the upper portion extending to the field oxygen layers (7).