Procedure for determining defect density in semiconductor wafers made of crystalline silicon by laser Scattering Tomography, comprising the irradiation of a split semiconductor disc by means of an IR laser along a test path parallel to a separation surface, which includes a 90-degree angle with a surface of the semiconductor disc, characterized by parts of the semiconductor disc perpendicular to the surface of the semiconductor disc along a dividing line by thermal laser separation, the surface of the semiconductor disc being essentially {111}-oriented.
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