COINTEGRATION METHOD FOR FORMING A SEMICONDUCTOR DEVICE

摘要

Method comprising:a) Providing a substrate and a first hardmask,b) Providing a second hardmask over a first region of the first hardmask,c) Forming a first set of hardmask fins in a second region of the first hardmask,d) masking the second region,e) Providing a set of photoresist fins on the second hardmask,f) Patterning the second hardmask and the first region by using the photoresist fins as a mask,g) Forming a first set of semiconductor fins of a first height by etching the substrate,h) Removing the mask provided in step d,i) Forming a second set of semiconductor fins of a second height in the second region and extending the height of the first set of semiconductor fins to a third height in the first region, by etching the substrate by using the first and second sets of hardmask fins as masks.