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APPARATUS FOR PRODUCING WAFER, METHOD FOR MANUFACTURING LARGE-DAIMETER SILICON CARBIDE WAFER AND LARGE-DAIMETER SILICON CARBIDE WAFER MANUFACTURED BY THE SAME
APPARATUS FOR PRODUCING WAFER, METHOD FOR MANUFACTURING LARGE-DAIMETER SILICON CARBIDE WAFER AND LARGE-DAIMETER SILICON CARBIDE WAFER MANUFACTURED BY THE SAME
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机译:制造晶片的装置,由相同的制造大直径碳化硅晶片和大直径碳化硅晶片的方法
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摘要
The present invention relates to a wafer manufacturing apparatus, a large-diameter silicon carbide wafer manufacturing method, and a large-diameter silicon carbide wafer manufactured by the same, and the wafer manufacturing apparatus according to an aspect of the present invention includes: a chamber; an inclined seed holder positioned inside the chamber; a source gas injection unit positioned under the inclined seed holder; a heating unit for heating the seed crystal mounting region; and an exhaust from which the reaction gas is discharged.
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