首页> 外国专利> APPARATUS FOR PRODUCING WAFER, METHOD FOR MANUFACTURING LARGE-DAIMETER SILICON CARBIDE WAFER AND LARGE-DAIMETER SILICON CARBIDE WAFER MANUFACTURED BY THE SAME

APPARATUS FOR PRODUCING WAFER, METHOD FOR MANUFACTURING LARGE-DAIMETER SILICON CARBIDE WAFER AND LARGE-DAIMETER SILICON CARBIDE WAFER MANUFACTURED BY THE SAME

机译:制造晶片的装置,由相同的制造大直径碳化硅晶片和大直径碳化硅晶片的方法

摘要

The present invention relates to a wafer manufacturing apparatus, a large-diameter silicon carbide wafer manufacturing method, and a large-diameter silicon carbide wafer manufactured by the same, and the wafer manufacturing apparatus according to an aspect of the present invention includes: a chamber; an inclined seed holder positioned inside the chamber; a source gas injection unit positioned under the inclined seed holder; a heating unit for heating the seed crystal mounting region; and an exhaust from which the reaction gas is discharged.
机译:本发明涉及晶片制造装置,大直径碳化硅晶片制造方法和由此制造的大直径碳化硅晶片,以及根据本发明的一个方面的晶片制造装置包括:腔室;位于腔室内的倾斜籽夹器;源气体注入单元位于倾斜的种子夹下;加热种子晶体安装区域的加热单元;和排出反应气体的排气。

著录项

  • 公开/公告号KR20210068748A

    专利类型

  • 公开/公告日2021-06-10

    原文格式PDF

  • 申请/专利权人 주식회사 티씨케이;

    申请/专利号KR1020190158135

  • 发明设计人 김강산;

    申请日2019-12-02

  • 分类号H01L21/02;C30B23;C30B25/12;C30B29/06;C30B29/36;H01L21/324;

  • 国家 KR

  • 入库时间 2024-06-14 21:39:31

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