Writing for cross point non-volatile memories

摘要

To provide a method, a system, and a device for avoiding disturbance of untargeted memory cells during repeated access to targeted memory cells for the purpose of a non-volatile memory array.SOLUTION: Multiple memory cells may be in electronic communication with a common conductive line, and each memory cell may have an electrically non-linear selection component. Following an access operation (e.g., a read or write operation) of a target memory cell, untargeted memory cells may be discharged by applying a discharge voltage 415 to the common conductive line. The discharge voltage 415 may, for example, have a polarity opposite to an access voltage 405. In other examples, a delay may be instituted between access attempts in order to discharge the untargeted memory cells.SELECTED DRAWING: Figure 4