NON-VOLATILE ORGANIC MEMORY DEVICE USING POLYMER ELECTRET AND NANO FLOATING GATE, AND MANUFACTURING METHOD THEREOF

摘要

An organic field effect transistor-based nonvolatile memory device, comprising: an organic semiconductor layer and a gate insulating layer, and further comprising a double layer of a polymer charge storage layer and a nanoparticle floating gate layer between the organic semiconductor layer and the gate insulating layer. A volatile organic memory device and a method of manufacturing the same are provided. According to the present invention, it is possible to provide a nonvolatile memory device having high reliability, excellent data erasing and storage capability, and high integration, and by forming the device on a flexible substrate, it is possible to achieve weight reduction, miniaturization, and cost reduction.