首页> 外国专利> ORGANICALLY MODIFIED METAL OXIDE NANOPARTICLE, METHOD FOR PRODUCING THE SAME, EUV PHOTORESIST MATERIAL, AND METHOD FOR PRODUCING ETCHING MASK

ORGANICALLY MODIFIED METAL OXIDE NANOPARTICLE, METHOD FOR PRODUCING THE SAME, EUV PHOTORESIST MATERIAL, AND METHOD FOR PRODUCING ETCHING MASK

机译:有机改性的金属氧化物纳米粒子,制备相同,EUV光致抗蚀剂材料的方法和生产蚀刻掩模的方法

摘要

An organically modified metal oxide nanoparticles that can be produced by a simple method and can increase the sensitivity and resolution of a resist material. The EUV photoresist material contains organically modified metal oxide nanoparticles and a solvent. The organically modified metal oxide nanoparticles include a core, a first modification group, and a second modification group. The core includes a plurality of metal atoms and a plurality of oxygen atoms bonded to the plurality of metal atoms. The first modification group is a carboxylic acid carboxylate ligand coordinated to the core. The second modification group is a carboxylic acid carboxylate ligand coordinated to the core and having a smaller molecular weight than the first modification group and/or an inorganic anion smaller in size than the first modification group.
机译:一种有机改性的金属氧化物纳米颗粒,其可以通过简单的方法生产并且可以增加抗蚀剂材料的灵敏度和分离。 EUV光致抗蚀剂材料含有有机改性的金属氧化物纳米颗粒和溶剂。有机改性的金属氧化物纳米颗粒包括核心,第一修饰基团和第二种改性基团。芯包括多个金属原子和与多个金属原子粘合的多个氧原子。第一修饰基团是羧酸羧酸羧酸盐配体,与核心配位。第二种改性基团是羧酸羧酸羧酸盐配体,其与核心配位并且具有比第一改性基团的较小分子量和/或尺寸小于第一修饰基团的无机阴离子。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号