A sensor includes an InGaAs photodetector (102) configured to convert received infrared radiation into electrical signals. A notch filter (108) is operatively connected to the InGaAs photodetector (102) to block detection of wavelengths within at least one predetermined band. An imaging camera system (100) includes an InGaAs photodetector (102) configured to convert received infrared radiation into electrical signals, the InGaAs photodetector including an array of photodetector pixels each configured to convert infrared radiation into electrical signals for imaging. At least one optical element (106) is optically coupled to the InGaAs photodetector (102) to focus an image on the array. A notch filter (108) is operatively connected to the InGaAs photodetector (102) to block detection of wavelengths within at least one predetermined band. A ROIC (104) is operatively connected to the array to condition electrical signals from the array for imaging.
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