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TFT structure based on flexible multi-layer graphene quantum carbon substrate material and method for manufacturing same

机译:基于柔性多层石墨烯量子碳基材的TFT结构及其制造方法

摘要

A TFT structure based on a flexible multi-layer graphene quantum carbon substrate material and a method for manufacturing the same. The TFT structure includes a multi-layer graphene quantum carbon substrate, a first source, a first drain, a first gate insulating layer, and a first gate. The multi-layer graphene quantum carbon substrate includes a first channel area, and a first drain area and a first source area that are located at corresponding recessed positions on the multi-layer graphene quantum carbon substrate that are separated from each other. The first channel area is located between the first drain area and the first source area, the first source is filled in the first source area, the first drain is filled in the first drain area, the first gate insulating layer is disposed on the first channel area, and the first gate is disposed on the first gate insulating layer.
机译:基于柔性多层石墨烯量子碳基材的TFT结构及其制造方法。 TFT结构包括多层石墨烯量子碳基板,第一源极,第一漏极,第一栅极绝缘层和第一栅极。多层石墨烯量子碳基板包括第一沟道区域,以及第一漏极区域和第一漏极区域和第一源极区域,其位于与彼此分开的多层石墨烯碳基板上的相应凹陷位置。第一沟道区域位于第一漏极区域和第一源极区域之间,第一源填充在第一源极区域中,第一源极填充在第一漏极区域中,第一栅极绝缘层设置在第一通道上区域,并且第一栅极设置在第一栅极绝缘层上。

著录项

  • 公开/公告号US11011646B2

    专利类型

  • 公开/公告日2021-05-18

    原文格式PDF

  • 申请/专利权人 GUANG DONG DONGBOND TECHNOLOGY CO. LTD.;

    申请/专利号US201916255801

  • 发明设计人 PING LIU;

    申请日2019-01-23

  • 分类号H01L29/786;H01L29/16;H01L29/66;H01L27/12;H01L21/8256;

  • 国家 US

  • 入库时间 2022-08-24 18:43:04

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