首页> 外国专利> TFT STRUCTURE BASED ON FLEXIBLE MULTI-LAYER GRAPHENE QUANTUM CARBON SUBSTRATE MATERIAL AND METHOD FOR MANUFACTURING SAME

TFT STRUCTURE BASED ON FLEXIBLE MULTI-LAYER GRAPHENE QUANTUM CARBON SUBSTRATE MATERIAL AND METHOD FOR MANUFACTURING SAME

机译:基于柔性多层石墨烯量子碳基质材料的TFT结构及其制造方法

摘要

A TFT structure based on a flexible multi-layer graphene quantum carbon substrate material and a method for manufacturing the same. The TFT structure includes a multi-layer graphene quantum carbon substrate, a first source, a first drain, a first gate insulating layer, and a first gate. The multi-layer graphene quantum carbon substrate includes a first channel area, and a first drain area and a first source area that are located at corresponding recessed positions on the multi-layer graphene quantum carbon substrate that are separated from each other. The first channel area is located between the first drain area and the first source area, the first source is filled in the first source area, the first drain is filled in the first drain area, the first gate insulating layer is disposed on the first channel area, and the first gate is disposed on the first gate insulating layer.
机译:基于柔性多层石墨烯量子碳衬底材料的TFT结构及其制造方法。 TFT结构包括多层石墨烯量子碳基板,第一源极,第一漏极,第一栅极绝缘层和第一栅极。所述多层石墨烯量子碳衬底包括彼此分离的第一沟道区,以及位于所述多层石墨烯量子碳衬底上的对应凹陷位置处的第一漏极区和第一源极区。第一沟道区位于第一漏极区和第一源极区之间,第一源极填充在第一源极区中,第一漏极填充在第一漏极区中,第一栅极绝缘层设置在第一沟道上第一栅极设置在第一栅极绝缘层上。

著录项

  • 公开/公告号US2019157463A1

    专利类型

  • 公开/公告日2019-05-23

    原文格式PDF

  • 申请/专利权人 GUANG DONG DONGBOND TECHNOLOGY CO. LTD.;

    申请/专利号US201916255801

  • 发明设计人 PING LIU;

    申请日2019-01-23

  • 分类号H01L29/786;H01L29/16;H01L27/12;H01L29/66;H01L21/8256;

  • 国家 US

  • 入库时间 2022-08-21 12:08:18

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