MULTI-LAYERED GRAPHENE QUANTUM CARBON-BASED SEMICONDUCTOR MATERIAL MANUFACTURED USING PI MEMBRANE AND MANUFACTURING METHOD THEREOF

摘要

Provided are a multi-layered graphene quantum carbon-based semiconductor material manufactured using a PI membrane, and a manufacturing method thereof. The manufacturing method comprises: S1. performing high-molecular weight sintering, using a PI membrane as the raw material, at a first temperature to remove H, O, and N atoms and form a carbon precursor; and S2. adjusting to a second temperature to perform graphitization on the carbon precursor to form a multi-layered graphene quantum carbon-based two-dimensional semiconductor material. Doping with a nanometallic material is carried out at least in step S2 to form quantum dots in the multi-layered graphene. The multi-layered graphene quantum carbon-based two-dimensional semiconductor material manufactured using the method has a molecular structure featuring a flat, hexagonal mesh. The structure has an orderly arrangement, is flexible, has a large tortuosity ratio, and extremely small intrafacial dispersion and offset. A bandgap can be formed by using nanometal doping. The bandgap can also be controlled. The manufacturing method can achieve large area, low cost, large batch, and continuous reel-to-reel production.