HARD X-RAY DETECTORS WITH PHOTON ENERGY ATTENUATION AND ELECTRON GENERATION-DETECTION LAYERS WITH INTEGRATION CAPABILITY TO CMOS IMAGE SENSOR (CIS)-BASED OR QUANTA IMAGE SENSOR (QIS)-BASED DEVICES

摘要

Aspects of the disclosure provide a radiation detector. The radiation detector includes a plurality of layers including a first layer and a second layer. The first layer includes a first material configured to reduce energy from first photons incident on a first side of the first layer and transmit reduced-energy second photons through a second side of the first layer and into the second layer. The second layer includes a second material configured to convert the reduced-energy second photons to a plurality of photoelectrons. The radiation detector includes readout circuitry configured to transmit electrical signals based on the plurality of photoelectrons. The transmitted electrical signals represent an intensity of the first photons incident on the first side of the first layer as a function of position on the first layer. The first layer can be stacked on the second layer. The first material can include a high atomic number (high-Z) material.