[Solution means] On a transparent substrate, having a second film formed with or without a first film interposed therebetween, and a third film and a fourth film which are hard mask films, and the first film and the third film against chlorine-based dry etching It is made of a material that has resistance and can be removed by fluorine-based dry etching, and the second film and the fourth film are made of a material that has resistance to fluorine-based dry etching and can be removed by chlorine-based dry etching. A photomask blank in which the etching clear time when the fourth film was subjected to chlorine-based dry etching under one condition is longer than the etching clear time when the second film was subjected to chlorine-based dry etching under the same conditions. [Effect] In the pattern formation process in photomask manufacturing, after forming the outer frame pattern, a photomask pattern can be formed in a simple process, and by forming the outer frame pattern first, defects due to resist residues The possibility of occurrence can be reduced.
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