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SiC single crystal growth apparatus containing movable heat-insulating material and growth method of SiC single crystal using the same
SiC single crystal growth apparatus containing movable heat-insulating material and growth method of SiC single crystal using the same
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机译:SiC单晶生长装置,其含有可动隔热材料和使用相同的SiC单晶的生长方法
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摘要
A SiC single crystal growth apparatus of an embodiment includes a seed crystal installation part in which a seed crystal is installable at a position thereof which faces a raw material; a guide member which extends from a periphery of the seed crystal installation part toward the raw material and guides crystal growth performed inside the guide member; and a heat-insulating material which is movable along an extension direction of the guide member on the outside of the guide member.
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