METHOD FOR ELLIPSOMETRIC CONTROL OF TOPOGRAPHICAL RELIEF, MECHANICAL STRESS AND DEFECTIVE FILM ON THE SUBSTRATE

摘要

FIELD: measuring equipment. ;SUBSTANCE: invention relates to interoperative monitoring of mechanical stress and defects in functional layers. The method includes ellipsometric measurements of refraction index in local areas of film. The method also presupposes that one should determine film thickness d_ƒ and the refraction indices for the ordinary ray n_o and the extraordinary ray n_e in each area of film. The rays are used to calculate the values of birefringence Δn: Δn=(n_o-n_e). The map of mechanical stress and the defects caused by it is determined according to the law of photoelasticity: σ=Δn/k where k is the elastic-optical constant determined by the formula: k=Δn/σ, with the use of the value determined by the Stony formula: where d_s, ν and E_s denote thickness, Poisson's ratio and Young's modulus of the substrate, R is the effective radius of curvature of the substrate with film. Topographic relief (or, in other words, local radii of curvature of the surface) is determined by the value of birefringence Δn and layer thickness d_ƒ. ;EFFECT: invention reduces time and complexity of monitoring defectiveness and mechanical stress and expands the range of measured parameters. ;1 cl, 1 tbl, 2 dwg