Semiconductor plug protected by a protective dielectric layer in a three-dimensional memory device and a method for forming a three-dimensional memory device

摘要

An embodiment of a 3D memory device having a semiconductor plug protected by a dielectric layer and a method for forming a 3D memory device are disclosed. In one example, a 3D memory device includes a substrate, a memory stack including a plurality of interleaved conductor and dielectric layers on the substrate, and a memory string extending vertically through the memory stack. The memory string includes a semiconductor plug underneath the memory string, a protective dielectric layer on the semiconductor plug, and a memory film formed over the protective dielectric layer and along sidewalls of the memory string.