Method for manufacturing a basic plasma pin diode having an AlAs-Ge-AlAs structure in a multi-layer holographic antenna

摘要

A method for manufacturing an AlAs-Ge-AlAs structure-based plasma pin diode in a multilayered holographic antenna, comprising: selecting a GeOI substrate, and arranging an isolation region within the GeOI substrate; etching the GeOI substrate to form a P-type trench and an N-type trench; depositing an AlAs material in the P-type trench and the N-type trench, and performing ion implantation on the AlAs material in the P-type trench and the N-type trench to form a P-type active region and an N-type active region; and forming leads on the surfaces of the P-type active region and the N-type active region to complete the preparation of an AlAs-Ge-AlAs structure-based plasma pin diode. According to the embodiments, by means of using the deep trench isolation technology and an ion implantation process, a high-performance Ge-based plasma pin diode, which is applicable to the formation of a solid-state plasma antenna, can be prepared and provided.