OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS

摘要

One embodiment of a semiconductor memory device including a multilayer charge storage layer and a method of forming the same is described. Generally, the device comprises a channel formed from a semiconductor material overlying a surface of a substrate connecting a source and a drain of the memory device; A tunnel oxide layer overlying the channel; And an oxygen-rich, first oxynitride layer on the tunnel oxide layer, wherein the first oxynitride layer has a stoichiometric composition of the first oxynitride layer substantially free of traps; An oxygen-lean, second oxynitride layer on a first oxynitride layer, wherein the stoichiometric composition of the second oxynitride layer is a multi-layer charge storage layer comprising the second oxynitride layer making the trap denser. layer charge storing layer). In one embodiment, the device comprises a non-planar transistor comprising a gate having a plurality of surfaces adjacent to the channel, the gate comprising the tunnel oxide layer and the multilayer charge storage layer.