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CONTACT PLUGS FOR SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME
CONTACT PLUGS FOR SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME
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机译:半导体器件的接触插头和形成相同的方法
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摘要
A semiconductor device and a method of forming the same are provided. A method includes forming a gate over a semiconductor structure. An epitaxial source/drain region is formed adjacent the gate. A dielectric layer is formed over the epitaxial source/drain region. An opening extending through the dielectric layer and exposing the epitaxial source/drain region is formed. A conductive material is non-conformally deposited in the opening. The conductive material fills the opening in a bottom-up manner.
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