首页> 外国专利> Configuring Different Via Sizes for Bridging Risk Reduction and Performance Improvement

Configuring Different Via Sizes for Bridging Risk Reduction and Performance Improvement

机译:配置不同的通过大小进行桥接风险降低和性能改进

摘要

A first gate structure, a second gate structure, and a third gate structure each extend in a first direction. A first gate via is disposed on the first gate structure. The first gate via has a first size. A second gate via is disposed on the second gate structure. The second gate via has a second size that is greater than the first size. A third gate via is disposed on the third gate structure. The third gate via has a third size that is less than the second size but greater than the first size. A first source contact is disposed adjacent to a first side of the first gate via. A first drain contact is disposed adjacent to a second side of the first gate via opposite the first side. A second drain contact is disposed adjacent to a first side of the third gate via.
机译:第一栅极结构,第二栅极结构和第三栅极结构各自在第一方向上延伸。第一栅极通孔设置在第一栅极结构上。第一栅极通过第一尺寸。第二栅极通孔设置在第二栅极结构上。第二栅极通孔具有大于第一尺寸的第二尺寸。第三栅极通孔设置在第三栅极结构上。第三栅极通孔具有小于第二尺寸但大于第一尺寸的第三尺寸。第一源触点与第一栅极通孔的第一侧相邻地设置。第一漏极触点与第一侧相对地邻近第一栅极的第二侧设置。第二漏极触点设置在第三栅极通孔的第一侧附近。

著录项

  • 公开/公告号US2021104438A1

    专利类型

  • 公开/公告日2021-04-08

    原文格式PDF

  • 申请/专利权人 TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.;

    申请/专利号US202017102766

  • 发明设计人 JHON JHY LIAW;

    申请日2020-11-24

  • 分类号H01L21/8234;H01L21/768;

  • 国家 US

  • 入库时间 2024-06-14 21:20:18

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号