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CONTACT SIZES TO REDUCE THE BRIDGE RISK AND IMPROVE PERFORMANCE

机译:缩小尺寸以降低桥梁风险并提高性能

摘要

A first gate structure, a second gate structure and a third gate structure each run in a first direction. A first gate via is arranged on the first gate structure. The first gate via has a first size. A second gate via is arranged on the second gate structure. The second gate via has a second size that is larger than the first size. A third gate via is arranged on the third gate structure. The third gate via has a third size that is smaller than the second size but larger than the first size. A first source contact is arranged adjacent to a first side of the first gate via. A first drain contact is disposed adjacent to a second side of the first gate via that is opposite the first side. A second drain contact is disposed adjacent to a first side of the third gate via.
机译:第一栅极结构,第二栅极结构和第三栅极结构均沿第一方向延伸。第一栅极通孔布置在第一栅极结构上。第一栅极通孔具有第一尺寸。第二栅极通孔布置在第二栅极结构上。第二栅极通孔具有大于第一尺寸的第二尺寸。第三栅极通孔布置在第三栅极结构上。第三栅极通孔具有第三尺寸,该第三尺寸小于第二尺寸但大于第一尺寸。第一源极触点被布置为邻近于第一栅极通孔的第一侧。与第一栅极的与第一侧相反的第二侧相邻的第一漏极触点被布置。第二漏极接触邻近第三栅极通孔的第一侧设置。

著录项

  • 公开/公告号DE102019103481A1

    专利类型

  • 公开/公告日2020-04-30

    原文格式PDF

  • 申请/专利权人 TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.;

    申请/专利号DE102019103481A1

  • 发明设计人 JHON JHY LIAW;

    申请日2019-02-12

  • 分类号H01L23/52;H01L27/088;H01L21/768;

  • 国家 DE

  • 入库时间 2022-08-21 11:01:25

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