BI-LAYER INSULATION STRUCTURE INCLUDING POLYCRYSTALLINE SEMICONDUCTOR MATERIAL FOR INTEGRATED CIRCUIT ISOLATION

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  机译： 包含多层半导体绝缘材料的双层绝缘结构，用于集成电路隔离

• 4. BI-LAYER INSULATION STRUCTURE INCLUDING POLYCRYSTALLINE SEMICONDUCTOR MATERIAL FOR INTEGRATED CIRCUIT ISOLATION [P] . 美国专利： US3519901A . 1970-07-07

  机译： 包含多层半导体绝缘材料的双层绝缘结构，用于集成电路隔离

• 5. METHOD OF FILLING HIGH ASPECT RATIO ISOLATION STRUCTURE WITH POLYSILAZANE BASED MATERIAL IN SILICON INTEGRATED CIRCUITS HAVING AT LEAST ONE P-N JUNCTION OR DISSIMILAR MATERIAL INTERFACE PRIOR TO ISOLATION STRUCTURE BUILDUP [P] . 韩国专利： KR20040104398A . 2004-12-10

  机译： 在隔离结构建立之前，在至少一个P-N结或异质材料界面的硅集成电路中用聚硅氮烷材料填充高纵横比隔离结构的方法

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