Method for obtaining a gleichmaessigen radial resistance curve in the production of a semiconductor - single crystal rod through free zone melting crucible

• 1. 一种有效提高区熔硅单晶径向电阻率均匀性的直拉区熔气掺法 [P] . 中国专利： CN102534753A . 2012-07-04
• 2. 一种获得宽范围电阻率区熔硅单晶的气掺系统装置及方法 [P] . 中国专利： CN103866377A . 2014-06-18
• 3. Method and device for achieving a gleichmaessigen radial resistance curve in the production of a half conductor crystal rod through free zone melting crucible [P] . 德国专利： DE2143394A1 . 1973-03-08

  机译： 通过自由区熔炼坩埚生产半导体晶体棒时获得镁硅铁合金径向电阻曲线的方法和装置

• 4. A method for influencing the radial resistance variation in the production of a half conductor single crystal rod through free zone melting crucible [P] . 德国专利： DE2204486A1 . 1973-08-09

  机译： 通过自由区熔化坩埚影响半导体单晶棒生产中径向电阻变化的方法

• 5. method for influencing the speed of single crystal bar in a radial resistance semiconductor in a melting crucible free zone [P] . BE813906A . 1974-08-16

  机译： 熔化坩埚自由区中影响径向电阻半导体中单晶棒速度的方法

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