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SILICON CONTROLLED RECTIFIER GATING CIRCUITS WITH A HIGH FREQUENCY TRIGGERING VOLTAGE AND PHOTOCELLS

机译:具有高频触发电压和光电池的硅控整流器门电路

摘要

1,214,817. Electroluminescence. GENERAL ELECTRIC CO. 14 Dec., 1967 [6 Feb., 1967 (2)], No. 56931/67. Heading C4S. [Also in Divisions G1, H2 and H3] A silicon controlled rectifier is triggered by light from an injection luminescent junction device transmitted to a light sensitive junction of the rectifier by a fibre optic element. The light-emitting diode (or L.E.D.) may have a hemispherical surface (Fig. 1b, not shown) secured to an optic fibre bundle by clamping means (22) having the same index of refraction as the fibres. In Fig. 1 light emitting diodes 17, 18 may simultaneously cause light sensitive thyristors or triacs to conduct energy to the load during one half cycle under the control of a variable pulsing network 16. If one L.E.D. is reversed full wave control is obtained. Variation of the power and the load may be effected by varying the phase or frequency of the control pulses. Fig. 2 shows a circuit operable as an inverter or as a reversing switch controlled by switches 41 and 42. A capacitor 37 charges until L.E.D. 32 conducts and emits light to trigger thyristors 25, 28. Capacitor 37 is discharged by the diode and the thyristors are switched off by a comutating circuit C.C. Subsequently L.E.D. 33 conducts to switch on thyristors 26, 27, the wavelength of the two L.E.D's being different so that the desired thyristors only are switched on. The sequence of switching may alternatively be obtained by a phase-shift network (Fig. 3, not shown) or the L.E.D. may be such as to emit light of different wavelengths for forward and reverse bias so as to trigger the corresponding thyristors (Fig. 4, not shown) to provide the control sequence or reversing of the switch. The different wavelengths may be obtained, in a further alternative, by selectively operable light filters. If the D.C. power supply is replaced by an A.C. supply or relatively high frequency the circuit could be operated as a cycle-converter. In Fig. 5 (not shown) the lower arms of the bridge of Fig. 2 are replaced by diodes and a single L.E.D. (47) is phase controlled through a triac the L.E.D. emitting light of different wavelengths on the different half cycles to selectively operate the corresponding thyristor for inverter or reversing switch operation. The L.E.D. is also shown controlling thyristors (67SP1/SP, 68SP1/SP) in a transformer type four way rectifying system or reversing switch.
机译:1,214,817。电致发光。通用电气公司,1967年12月14日[1967年2月6日(2)],第56931/67号。标题C4S。 [也在G1,H2和H3分部中]可控硅整流器由来自注入发光结器件的光触发,该光通过光纤元件传输到整流器的光敏结。发光二极管(或L.E.D.)可具有半球形表面(图1b,未示出),该半球形表面通过具有与纤维相同的折射率的夹持装置(22)固定到光纤束。在图1中,在可变脉冲网络16的控制下,发光二极管17、18可同时使光敏晶闸管或双向可控硅在半个周期内将能量传导到负载。反向获得全波控制。功率和负载的变化可以通过改变控制脉冲的相位或频率来实现。图2示出了可作为由开关41和42控制的反相器或反向开关工作的电路。电容器37充电直到L.E.D。 32导通并发光以触发晶闸管25、28。电容器37由二极管放电,晶闸管由计算电路C.C关断。随后L.E.D. 33导通以接通晶闸管26、27,两个L.E.D的波长不同,从而仅接通所需的晶闸管。切换的顺序可以通过相移网络(图3,未示出)或L.E.D.获得。可以发射诸如正向和反向偏置的不同波长的光,以便触发相应的晶闸管(图4,未示出)以提供控制序列或开关的反向。在另一替代方案中,可以通过选择性地操作滤光器来获得不同的波长。如果将直流电源替换为交流电源或相对较高的频率,则该电路可以用作循环转换器。在图5(未示出)中,图2的桥的下臂由二极管和单个L.E.D.代替。 (47)通过双向可控硅控制L.E.D.在不同的半周期上发射不同波长的光,以有选择地操作相应的晶闸管以进行逆变器或反向开关操作。 L.E.D.还显示了在变压器型四路整流系统或换向开关中控制晶闸管(67 1 ,68 1 )的情况。

著录项

  • 公开/公告号JPS494788B1

    专利类型

  • 公开/公告日1974-02-02

    原文格式PDF

  • 申请/专利权人

    申请/专利号JP19680007362

  • 发明设计人

    申请日1968-02-06

  • 分类号G05F1/10;H02M1/092;H03K3/352;H03K3/42;H03K17/79;H03K17/795;

  • 国家 JP

  • 入库时间 2022-08-23 06:18:43

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