integrated circuit design technology was in a field effect memory circuit, including a transistor with elements

摘要

1441004 Semi-conductor devices SIEMENS AG 15 Oct 1973 [13 Nov 1972] 48507/73 Heading H1K An integrated storage circuit comprises a number of single field-effect transistor storage elements each having a gate electrode 5, disposed in a first plane above the surface of the circuit and spaced therefrom by a first insulating layer 4, the gate electrode 5 of at least some of the transistors being connected to a common conductor path 7 lying in a second plane spaced above the first plane by a second insulating layer 44, the contact region between each gate electrode 5 and the common conductor 7 being located at least in part above the channel zone 8 of the respective IGFET. As shown, each transistor storage element in the substrate 1 has diffused drain and source regions 2, 3 and a first layer 4 of silicon dioxide formed thereon. Gate eletrode 5 and an electrode 6 are formed of doped polycrystalline silicon or molybdenum and the common conductor path 7 of aluminium is formed over a second layer 44 of silicon dioxide. Each of the single-transistor storage elements in the storage circuit may be connected in series with a respective dielectric capacitor whose electrodes are formed by the electrode 6 in the first conductor plane and the inversion layer 66 in the semi-conductor body. The integrated storage circuit may be formed by an array of storage elements connected in rows, Fig. 3 (not shown).