首页> 外国专利> Monolithic integrated semiconductor circuit - has planar transistor structure as constant current source transistor base zone surrounded by auxiliary collector zone

Monolithic integrated semiconductor circuit - has planar transistor structure as constant current source transistor base zone surrounded by auxiliary collector zone

机译:单片集成半导体电路-具有平面晶体管结构,作为恒流源晶体管基极区,被辅助集电极区包围

摘要

The integrated circuit has a series of additional planar transistors, forming constant current sources whose emitter and base zones are parallel connected. One planar transistor, together with a setting resistor, serves as a reference voltage source for the other planar transistors and the planar transistor structure. - The planar transistor structure is provided in an epitaxial layer on a semiconductor substrate of opposite conductivity. It is surrounded by an insulating zone of substrate conductivity, penetrating the epitaxial layer. The structure can reach saturation during operation. The base zone (8) of the transistor structure is surrounded by an auxiliary collector zone (9) of identical conductivity on the free surface (11) of the epitaxial layer (2). The auxiliary collector zone is directly connected to the emitter zone
机译:集成电路具有一系列附加的平面晶体管,形成恒定电流源,其发射极和基极区并联连接。一个平面晶体管与设置电阻器一起用作其他平面晶体管和平面晶体管结构的参考电压源。 -在具有相反导电性的半导体衬底上的外延层中提供平面晶体管结构。它被衬底导电性的绝缘区域包围,穿透了外延层。该结构可以在操作期间达到饱和。晶体管结构的基区(8)在外延层(2)的自由表面(11)上被导电率相同的辅助集电极区(9)围绕。辅助集电极区直接连接到发射区

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