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Heterostructure transistor technology for microwave monolithic integrated circuit applications.

机译：用于微波单片集成电路应用的异质结构晶体管技术。

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In this article we demonstrate that the HEMT technology can be applied to MESFET based microwave monolithic integrated circuits to yield improved performance margins. Typical performance for the low-noise (LNA) and wideband (TWA) amplifiers studied are: for the HEMT-LNA » 2.2 dB noise figure and » 26 dB gain at 12 GHz in comparison with » 2.8 dB noise figure and »20 dB gain for the MESFET-LNA; for the HEMT-TWA » 8 dB. gain in the frequency range 0.2 to 18 GHz as composed to » 6 dB gain for the MESFET-TWA.

机译：在本文中，我们证明了HEMT技术可以应用于基于MESFET的微波单片集成电路，以提高性能裕度。研究的低噪声（LNA）和宽带（TWA）放大器的典型性能为：对于HEMT-LNA，在2.2 GHz时的噪声系数和12 dB时的增益为26 dB，而在2.8 dB的噪声系数和20 dB的增益中用于MESFET-LNA;对于HEMT-TWA»8 dB。 MESFET-TWA在0.2至18 GHz频率范围内的增益为»6 dB。

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Calori M.; Cetronio A.; Graffitti R.; Lanzieri C.; Rapisarda S.;
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年度 1990
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入库时间 2022-08-20 20:25:16

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1. Transient Radiation Effects in Microwave Monolithic Integrated Circuits Based on Heterostructure Field-Effect Transistors: Experiment and Model [J] . V. V. Elesin Russian Microelectronics . 2014,第2期

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2. Three-dimensional monolithic microwave integrated circuit technology for fully computer-aided design-compatible monolithic microwave integrated circuit development [J] . Kenjiro Nishikawa, Ichihiko Toyoda, Kenji Kamogawa, International journal of RF and microwave computer-aided engineering . 1998,第6期

机译：用于完全计算机辅助设计兼容的单片微波集成电路开发的三维单片微波集成电路技术
3. Large microwave tunability of gaas-based multiferroic heterostructure for applications in monolithic microwave integrated circuits [J] . Chen Y., Gao J., Heiman D., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2010,第49期

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4. A monolithically integrated photoreceiver realized by InP/InGaAs double-heterostructure bipolar transistor technologies for optical/microwave interaction systems [C] . Kamitsuna, H., Matsuoka, Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE . 1995

机译：通过InP / InGaAs双异质结构双极晶体管技术实现的单片集成光接收器，用于光/微波相互作用系统
5. Design and technology of millimeter-wave indium aluminum arsenide/indium gallium arsenide high electron mobility transistors (HEMT's) and monolithic integrated circuits. [D] . Kwon, Youngwoo. 1994

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6. An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band [O] . Junfeng Li, Shuman Mao, Yuehang Xu, 2018

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7. Heterostructure transistor technology for microwave monolithic integrated circuit applications. [O] . Calori M., Cetronio A., Graffitti R., 1990

机译：用于微波单片集成电路应用的异质结构晶体管技术。
8. Monolithic Microwave Integrated Circuit (MMIC) Technology for Space Communications Applications. [R] . connolly, d. j. bhasin, k. b. 1987

机译：用于空间通信应用的单片微波集成电路（mmIC）技术。

Heterostructure transistor technology for microwave monolithic integrated circuit applications.

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