NEAR-INFRARED LIGHT EMITTING DIODES AND DETECTORS EMPLOYING CDSNP2:INP HETERODIODES

摘要

1494348 Electroluminescence WESTERN ELECTRIC CO Inc 9 Dec 1974 [10 Dec 1973] 53088/74 Heading C4S [Also in Division H1] The N type zone of an indium phosphide PN junction diode capable of emitting infra-red radiation contains tin donor atoms partially compensated by cadmium acceptor atoms the doping being such as to shift the wavelength peak emission intensity to a value between 0À925 and 1À1 Á. In a preferred embodiment the N type zone is deposited by liquid phase epitaxy on a 100, 111 or 110 orientated face of a cadmium or zinc doped P type indium phosphide body having a hole concentration of not more than 5 Î 10SP17/SP holes/cm.SP3/SP. The deposition step is performed in a sealed capsule as described in Specification 1,450,433 but using a presaturated melt richer in indium phosphide. After flooding the body the melt is cooled, typically at from 4-15‹ C. per hour. The cadmium and tin doping lowers the band gap of the P type region to give high quantum efficiency production of radiation having a wavelength up to 1À1 Á, which matches the low loss window of a fused silica glass optic fibre. Forward resistance of the diode may be lowered by substituting for the P type body a thin layer on a low resistivity substrate of indium phosphide.