Utilization of a substrate alignment marker in epitaxial deposition processes

摘要

An alignment marker on a substrate surface is covered with polycrystalline semiconductor material during the growth of an epitaxial layer on the monocrystalline substrate. This polycrystalline material is then removed with a selective etchant to re-expose the marker for use in defining an area for processing at the epitaxial layer surface. Permits accurate alignment between buried layers and regions formed from the epitaxial layer surface. Permits provision of the marker on the substrate when it is undesirable to provide the marker on the epitaxial layer surface. Particularly advantageous for electron image projection exposure of electron-sensitive resists.