method for treating a substrate of gallium arsenide.

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• 2. 用于制备砷化镓衬底的方法、砷化镓衬底及其用途 [P] . 中国专利： CN109801836A . 2019-05-24
• 3. method for treating a substrate of gallium arsenide. [P] . NL162313B . 1979-12-17

  机译： 用于处理砷化镓衬底的方法。

• 4. METHOD FOR MANUFACTURING SURFACE-TREATED GALLIUM-NITRIDE SUBSTRATE AND SURFACE-TREATED GALLIUM-NITRIDE-BASED EPITAXIAL SUBSTRATE, GALLIUM-NITRIDE SUBSTRATE, AND GALLIUM-NITRIDE-BASED EPITAXIAL SUBSTRATE [P] . 日本专利： JP2007115985A . 2007-05-10

  机译： 制造表面处理过的氮化镓基体和表面处理过的氮化镓基表皮基体，氮化镓基和硝酸镓基表皮基体的方法

• 5. Method for depositing layer stack i.e. film, of copper indium gallium selenide solar cell on glass substrate utilized in e.g. vacuum coating system, involves heat-treating and cooling absorber layer for stabilization of layer composition [P] . 德国专利： DE102011005755A1 . 2012-09-20

  机译： 将铜铟镓硒太阳能电池的叠层即薄膜沉积在玻璃基板上的方法真空镀膜系统，包括热处理和冷却吸收剂层，用于稳定层组成

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• 1. Annealing treatment of focused gallium ion beam processing of SERS gold substrate [J] . Zhixiang Tao ,Wei Zhao ,Shang Wang . 纳米技术与精密工程 . 2021,第004期
• 2. Growth properties of gallium oxide on sapphire substrate by plasma-assisted pulsed laser deposition [J] . Congyu Hu ,Katsuhiko Saito ,Tooru Tanaka . 半导体学报：英文版 . 2019,第12期
• 3. Hydride vapor phase epitaxy for gallium nitride substrate [J] . Jun Hu ,Hongyuan Wei ,Shaoyan Yang . 半导体学报：英文版 . 2019,第10期
• 4. Effect of Deposition Temperature on the Physical Characteristic of GaN Thin Films Deposited by Spincoating Technique on a Sapphire Substrate Using Gallium-Citrate-Amine Gel and Nitrogen Gas [J] . Andi Suhandi ,Dadi Rusdiana ,Yuyu Rachmat Tayubi . 材料科学与工程：中英文B版 . 2011,第006期
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