High frequency FET - has narrow channel between source and drain electrodes for high velocity electron injection

摘要

The high frequency field effect transistor with a gate electrode forming a rectifier contact, has source and drain electrodes forming a channel on the semiconductor layer. Its length is less than 1 micron. The source electrode consists of a rectifying metal and semiconductor contact material which receives a potential so that it is tunnelled by charge carriers so that hot electrons are injected into the channel from the source electrode with a high initial velocity. The potential is selected so that the charge carriers have the maximum possible drift velocity. The channel length can be less than 0.4 micron. The drain electrode is of a non-rectifying ohmic metal contact in the semiconductor layer.