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Effects of Low-Frequency Source on a Dual-Frequency Capacitive Sheath near a Concave Electrode

机译:低频源对凹电极附近双频电容鞘的影响

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摘要

A self-consistent two-dimensional(2D) collisionless fluid model is developed to simulate the effects of the low-frequency(LF) power on a dual frequency(DF) capacitive sheath over an electrode with a cylindrical hole.In this paper,the time-averaged potential,electric field(Efield),ion density in the sheath,and ion energy distributions(IEDs) at the center of the cylindrical hole's bottom are calculated and compared for different LF powers.The results show that the LF power is crucial for determining the sheath structure.As the LF power decreases,the potential drop decreases,the sheath becomes thinner,and the plasma molding effect seems to be more significant.The existence of a radial E-field near the sidewalls of a hole may cause a significant portion of ions to strike the sidewall and lead to the phenomenon of notching.

著录项

  • 来源
    《等离子体科学和技术(英文版)》 |2014年第4期|320-323|共4页
  • 作者单位

    Department of Physics and Electronic Engineering, Handan College, Handan 056005, China;

    School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023, China;

    School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023, China;

  • 收录信息 中国科学引文数据库(CSCD);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-19 03:35:41
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