A method for growing n - conductive gaas - layers with the aid of molecular beam epitaxy

摘要

A method of growing an n-type GaAs layer on a substrate by a molecular beam epitaxy process, the dopant consisting of S, Se or Te. The layer is prepared by directing molecular beams of gallium, arsenic and PbX, where X is S, Se or Te, onto a heated substrate. It has not proved practicable to grow an n-type GaAs layer by molecular beam epitaxy using S, Se or Te as dopant in the form of a molecular beam consisting of elemental S, Se or Te.