PROCESS FOR INCREASING THE INTERNAL TRAPPING EFFECT OF SEMICONDUCTOR BODIES

摘要

The present invention relates to a method for increasing the internal trapping effect of semiconductor bodies. It relates more particularly to the generation of precipitates of oxygen atoms which will subsequently be used, as centers for trapping unwanted impurities, during the various thermal cycles to which these bodies are usually subjected in the manufacture of semiconductor integrated circuits. /P P This process is characterized in that the servo-conducting body is subjected to a thermal annealing step at a temperature between 750 and 900 degrees C and a duration between 1 and 8 hours. The precipitation coefficient K1050, which characterizes the number of precipitates, for an initial concentration Oo of 3030PPMA, varies from 0.3 (absence of annealing: curve IV) to approximately 2 (annealing at 825 degrees C for 2 hours: curve II) a gain of around 7.