Process for the preliminary heating of semiconductor bodies in view of subsequently increasing their internal gettering effect

摘要

The present invention relates to a method to increase the internal trapping effect semiconductor body. It concerns more particularly the generation of precipitates of oxygen atoms for future use, as unwanted impurities trapping centers, during the various thermal cycles that are usually submitted the body in the manufacture of integrated circuits semi- conductors.; This method is characterized in that the semiconductor body is subjected to a thermal annealing step at a temperature between 750 and 900 ° C with a duration between 1 and 8 hours. The coefficient of précipitabil ⁱ ty K1050, which characterizes the number of precipitates for an initial concentration of O ₀ 30ppmA ranges from 0.3 (no annealing: curve IV) with approximately 2 (annealed at 825 ° C for 2 hours: curve II) is a gain of approximately seven.