首页>
外国专利>
PROCESS FOR THE PRELIMINARY HEATING OF SEMICONDUCTOR BODIES IN VIEW OF SUBSEQUENTLY INCREASING THEIR INTERNAL GETTERING EFFECT
PROCESS FOR THE PRELIMINARY HEATING OF SEMICONDUCTOR BODIES IN VIEW OF SUBSEQUENTLY INCREASING THEIR INTERNAL GETTERING EFFECT
展开▼
机译:鉴于其内部吸气效应的继后增加,半导体本体的初步加热过程
展开▼
页面导航
摘要
著录项
相似文献
摘要
The gettering effect in the bulk of semiconductor bodies is increased by heating the bodies prior to device processing to a temperature of from 750 DEG -900 DEG C. for from 1-8 hours in order to generate oxygen precipitates in the form of clusters.
展开▼