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Process for the preliminary heating of semiconductor bodies in view of subsequently increasing their internal gettering effect
Process for the preliminary heating of semiconductor bodies in view of subsequently increasing their internal gettering effect
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机译:鉴于随后增加其内部吸杂效果而对半导体本体进行初步加热的方法
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摘要
The gettering effect in the bulk of semiconductor bodies is increased by heating the bodies prior to device processing to a temperature of from 750 DEG -900 DEG C. for from 1-8 hours in order to generate oxygen precipitates in the form of clusters.
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