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Ohmic contact of N-GaAs to electrical conductive substrates by controlled growth of N-GaAs polycrystalline layers
Ohmic contact of N-GaAs to electrical conductive substrates by controlled growth of N-GaAs polycrystalline layers
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机译:通过控制N-GaAs多晶层的生长N-GaAs与导电衬底的欧姆接触
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摘要
Thin layers of polycrystalline n-type GaAs have been deposited on a conducting substrate such as graphite. These contacted GaAs layers exhibit desirable properties for device applications, i.e., adequate cohesion between the GaAs and the substrate, good electrical contact to the conducting substrate, and good nucleation of the GaAs on the substrate yielding pinhole free or near pinhole free GaAs layers composed of large grains. These properties are obtained by first depositing a very thin coating, a coating with a nominal thickness between 1000 A and 250 A, of a Group IV element, Ge, Si, or Sn, onto the conducting substrate and then depositing the GaAs over this thin layer.
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