SEMICONDUCTIVE MEMORY DEVICE AND FABRICATING METHOD THEREFOR

摘要

In prior art, for a one-transistor-one-capacitor-memory, the area of a memory cell is influenced by the accuracy of patterning for capacitor electrodes (3). The prior art requires therefore to take into estimation an error in patterning the capacitor electrodes (3) in addition to the minimum requisite area to the capacitor electrodes. For decreasing the area of a memory cell, according to the present invention, capacitors (14) are made of silicon nitride, memory cells are isolated by the combination of thick insulator layers (18) and field-shield layers (20), and capacitor electrodes (13) are formed by self-alignment, using the field-shield layers (20) and gate electrodes (16) of the transistors. The present invention is usable for IC-and LSI-fabrications.