Brief description of embodiments of an ohmic contact on semiconductors of the group iii - v

摘要

P the invention relates to the semiconductor industry. / p & & p & is an ohmic contact with a low resistance and good adhesion to the surface of the n type of a body 11 in the semiconductor of the group iii - v comprised, in succession, a gold layer 13, a tin layer 14 and a gold layer 15, to a surface temperature of less than 200°C, then in carrying out a heat treatment in a non-oxidizing atmosphere. This method is particularly advantageous in the case of the semiconductors compounds containing aluminum. / p & & p & application to the manufacture of light-emitting diodes (leds). / p