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Dynamic pressure sensor, esp. hydrophone - using thin layer of piezoelectric zinc oxide on semiconductor substrate

机译:动态压力传感器,特别是水听器-在半导体衬底上使用压电氧化锌薄层

摘要

The sensor consists of a substrate, on which is a piezoelectric transducer layer obtd. by deposition in vacuo directly on the substrate, onto a conducting layer on the substrate. The piezoelectric layer is at least ten times thinner than the substrate, and is covered by a conducting layer. The piezoelectric layer is pref. ZnO and obtd. by cathodic bombardment. The substrate is pref. a semiconductor, esp. Si, Ge, GaAs, or InP. The sensor may consist of numerous units, each using a piezoelectric layer sandwiched between two electrodes, the lower electrode being connected to the upper electrode of the next unit. Esp. for buoys carrying numerous hydrophones for detecting submarines; and also as pressure sensors in motor vehicles. The sensors are inexpensive, but have a high signal/noise ratio.
机译:该传感器由基板组成,在其上是压电换能器层。通过在真空中直接沉积在基材上,沉积到基材上的导电层上。压电层比基板至少薄十倍,并且被导电层覆盖。压电层是优选的。 ZnO和obtd。通过阴极轰击。基材是优选的。半导体,特别是Si,Ge,GaAs或InP。传感器可以由多个单元组成,每个单元都使用夹在两个电极之间的压电层,下电极连接到下一个单元的上电极。 Esp。用于携带大量水听器以检测潜艇的浮标;以及作为汽车中的压力传感器。传感器价格便宜,但信噪比高。

著录项

  • 公开/公告号FR2498405A1

    专利类型

  • 公开/公告日1982-07-23

    原文格式PDF

  • 申请/专利权人 THOMSON CSF;

    申请/专利号FR19810000778

  • 发明设计人 CHARLES MAERFELD;

    申请日1981-01-16

  • 分类号H04R1/44;

  • 国家 FR

  • 入库时间 2022-08-22 12:27:02

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