method for compensation of the vertical autodoping in cvd siliziumschichten

• 1. 基于碳化硅衬底的垂直氮化铝金属氧化物半导体场效应晶体管及制备方法 [P] . 中国专利： CN112038408B . 2021.11.23
• 2. 一种碳化硅衬底垂直结构簿膜电子器件及其制作方法 [P] . 中国专利： CN107706086B . 2020.05.01
• 3. method for compensation of the vertical autodoping in cvd siliziumschichten [P] . DD200952A1 . 1983-06-22

  机译： 硅衬底垂直垂直掺杂的补偿方法

• 4. method for compensation of the lateral autodopings in cvd epitaxieschichten [P] . DD206799A1 . 1984-02-08

  机译： 磊晶磊晶中横向自掺杂的补偿方法

• 5. Method to inhibit autodoping in epitaxial layers from heavily doped substrates in CVD processing [P] . 美国专利： US4661199A . 1987-04-28

  机译： 在CVD工艺中抑制来自重掺杂衬底的外延层中自动掺杂的方法

• 1. Induced Synthesis of Vertically Oriented Multilayer M0S2 via CVD Method [C] . Shuang Liu, Changbin Nie International Conference on Advanced Electronic Materials, Computers and Materials Engineering . 2019
• 2. Heteroepitaxial Thick GaN Layers and Vertical High-Power Devices by Selective Area MOCVD Growth [D] . Tanaka, Atsunori. 2019
• 3. Direct synthesis of vertically aligned ZnO nanowires on FTO substrates using a CVD method and the improvement of photovoltaic performance [O] . Liyou Lu, Jiajun Chen, Lijuan Li, 2012
• 4. Research on rapid growth of monolayer graphene by vertical cold-wall CVD method [O] . Kun Xu, Xiangyang Duan, Yan Li, 2020

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