METHOD OF FABRICATING A DIODE BRIDGE RECTIFIER IN MONOLITHIC INTEGRATED CIRCUIT STRUCTURE

摘要

D-22641ABSTRACT OF THE DISCLOSUREMethod of fabricating monolithic integrated circuitstructure incorporating a full-wave diode bridge rectifierof four Schottky diodes. A body of silicon is produced bygrowing an epitaxial layer of N-type silicon on a P-typesubstrate. P-type imparting material is diffused into thelayer to form isolating barriers delineating first andsecond N-type zones separated from each other by inter-vening P-type material and third and fourth N-type zoneswhich are contiguous. A mixture of titanium and tungstenis deposited on portions of the zones and heated to forma mixed silicide. Schottky rectifying barriers are pro-duced at the interfaces of the mixed silicide and N-typezones. Conductive members are formed; a first conductivemember is connected to the N-type material of the firstzone and the silicide of the third zone, a second conduc-tive member is connected to the N-type material of thesecond zone and the silicide of the fourth zone, a thirdconductive member is connected in common to the silicideof the first and second zones, and a fourth conductivemember is connected to the N-type material of the thirdand fourth zones. An AC voltage applied across the firstand second conductive members produces a DC voltage acrossthe third and fourth conductive members.