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Method of fabricating a diode bridge rectifier in monolithic integrated circuit structure utilizing isolation diffusions and metal semiconductor rectifying barrier diode formation
Method of fabricating a diode bridge rectifier in monolithic integrated circuit structure utilizing isolation diffusions and metal semiconductor rectifying barrier diode formation
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机译:利用隔离扩散和金属半导体整流势垒二极管形成的单片集成电路结构中的二极管桥式整流器的制造方法
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摘要
Method of fabricating monolithic integrated circuit structure incorporating a full-wave diode bridge rectifier of four Schottky diodes. A body of silicon is produced by growing an epitaxial layer of N-type silicon on a P-type substrate. P-type imparting material is diffused into the layer to form isolating barriers delineating first and second N-type zones separated from each other by intervening P-type material and third and fourth N-type zones which are contiguous. A mixture of titanium and tungsten is deposited on portions of the zones and heated to form a mixed silicide. Schottky rectifying barriers are produced at the interfaces of the mixed silicide and N-type zones. Conductive members are formed; a first conductive member is connected to the N-type material of the first zone and the silicide of the third zone, a second conductive member is connected to the N-type material of the second zone and the silicide of the fourth zone, a third conductive member is connected in common to the silicide of the first and second zones, and a fourth conductive member is connected to the N-type material of the third and fourth zones. An AC voltage applied across the first and second conductive members produces a DC voltage across the third and fourth conductive members.
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