Method of making a planar avalanche photodiode having a longwave sensitivity limit above 1.3 um

摘要

Method for producing an avalanche photodiode with an epitaxial layer sequence (13-15) on a carrier body (16) which was not a substrate for the epitaxy, the one epitaxial layer (13) serving as a selectively etchable mask (18) for the generation of the pn -Transition (17) is used.