Nonvolatile memory device (mon volatile memory device)

摘要

The nonvoltaile memory device comprises a number of memory cells composed of insulated gate-type field effect semiconductor elements and terminals for applying writing voltage and a reading voltage to the memory cells. Wirings for connecting in common insulated gate- type field effect transistor elements of the memory cells, and resistance elements of MISFETs which are connected between the wirings and the terminals. The resistance elements or MISFETs are composed of a polycrystalline silicon film or a single crystal silicon film formed on the field insulation film.