A circuit of the memory cells, has a transistor by bit

摘要

P the present invention relates to a circuit of memory cells to a transistor. / p & & p & in such a memory circuit comprising memory cells 10 used in two groups of rows 30 and 40, it is conventionally made of the differential amplifiers 12 having a first input 1 connected to the memory cells of the group 30 and a second input 2 connected to the memory cells of the unit 40. Such a circuit comprises an output amplifier 14, which conventionally one of the inputs 3 is connected to a potential of labels. According to the present invention, this input terminal 3 is connected to the cells of the second group by means of connection means 20 'controlled by the same control signals as those which commanded the connection means 20 of the conventional. Application to the increase of speed of the memory circuits. / p