DIGITAL integrated circuit with complementary field effect transistors.

• 1. 具有独立栅极控制的垂直堆叠互补场效应晶体管装置 [P] . 中国专利： CN110783273A . 2020-02-11
• 2. 具有双功函数金属栅的互补场效应晶体管及其制造方法 [P] . 中国专利： CN103579113B . 2017.02.08
• 3. Field effect transistor with channel p with a quantum well structure, and integrated circuit to complementary transistors. [P] . 法国专利： FR2694132B1 . 1994-10-14

  机译： 具有具有量子阱结构的沟道p的场效应晶体管，以及用于互补晶体管的集成电路。

• 4. Integrated circuit with complementary heterojunction field effect transistors. [P] . 法国专利： FR2690277A1 . 1993-10-22

  机译： 具有互补异质结场效应晶体管的集成电路。

• 5. INTEGRATED CIRCUIT complementary field effect transistors. [P] . NL8303441A . 1985-05-01

  机译： 集成电路互补场效应晶体管。

• 1. TRANSIENT CHARACTERISTIC ANALYSIS OF HIGH TEMPERATURE CMOS DIGITAL INTEGRATED CIRCUITS [J] . 柯导明, 冯耀兰, 童勤义, 电子科学学刊：英文版 . 1994,第002期
• 2. Co-development of complementary technology and modified-CPL family for organic digital integrated circuits [C] . Fabio Carta, Htay Hlaing, Hassan Edrees, Materials Research Society Meeting . 2015
• 3. New platforms for electronic devices: N-channel organic field-effect transistors, complementary circuits, and nanowire transistors. [D] . Yoo, Byungwook. 2007
• 4. Water-Gated n-Type Organic Field-Effect Transistorsfor Complementary IntegratedCircuits Operating in an Aqueous Environment [O] . Rossella Porrazzo, ⊥, Alessandro Luzio, 2017
• 5. III-V complementary HIGFET technology for low power microwave and high speed/low power digital integrated circuits [O] . Fawaz Hussein, Thiery Jean-Francois, Linh Nuyen, 1996
• 6. Design and Development of a Digital Subsystem Employing n and p-Channel MOS Fet's in Complementary Circuits in an Integrated Circuit Array Final Report, 1 May 1967 - 30 Apr. 1968 [R] . Keller, K. R., Yung, A. 1968

• 1. Application prof iles of integrated circuits in various industry fields [J] . Hongjing Zhang . 无线互联科技 . 2014,第008期
• 2. Reconfigurable Digital Circuits Based on Chip Expander with Integrated Temperature Regulation [J] . Vaclav Simek ,Richard Ruzicka ,Adam Crha . 电脑和通信（英文） . 2015,第11期
• 3. Creating Distinctive Connections between Multifunctional Microwave Circuits and Mobile-Terminal Radio-Frequency Integrated Chips Using Integrated Passive Device Technology [J] . Yongle Wu ,Mengdan Kong ,Zheng Zhuang . 中国通信 . 2021,第008期
• 4. Design of systolic B^N circuits in Galois fields based on quaternary logic [J] . 吴海霞 ,屈晓楠 ,何易瀚 . 北京理工大学学报：英文版 . 2014,第1期
• 5. 具有负离子注入钝化层的氮化镓基场效应晶体管设计 [C] . 蒋知广 ,杜江锋 ,潘沛霖 . 第一届全国宽禁带半导体学术及应用技术会议 . 2015
• 6. 低电压有机场效应晶体管及其在互补电路和存储器中的应用 [A] . 刘杰 . 2017