Low energy ion etching

摘要

A substrate is irradiated in a pattern with a neutron beam at energy levels well below those which produce either atomic reactions or physical disruption of the substrate structure. When etched with a suitable etchant, the irradiated portions are preferentially etched to produce a pattern corresponding to the irradiated pattern. In one embodiment of the invention, aluminosilicate crystals are irradiated with neutrons and are etched with hydrofluoric acid to produce the etched structure.